Journal article
Characterization of Au/As2Se3/MoO3/Ag hybrid devices designed for dual optoelectronic applications


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Publication Details
Author list: T. S. Kayed and A. F. Qasrawi
Publisher: Elsevier
Publication year: 2020
Journal: Current Applied Physics
Volume number: 20
Issue number: 1
Start page: 114
End page: 121
Number of pages: 8
ISSN: 1567-1739
Web of Science ID: 000496996300019
PubMed ID:
Scopus ID: 85073624825


In this work, hybrid devices composed of n−As2Se3/p−MoO3 encapsulated between two Schottky shoulders (Au/n-As2Se3, Ag/MoO3) are prepared and characterized. While the structural analyses proofed the preferred growth of monoclinic MoO3 onto amorphous layers of As2Se3, the spectroscopic ellipsometry analysis revealed the high frequency dielectric constants, the effective mass and the negative pseudodielectric constant values. Electrically, the hybrid device displayed both tunneling and standard diode characteristics. As passive mode devices, the capacitance-voltage characteristics displayed the accumulation-depletion -inversion modes in the device. Furthermore, the conductivity spectral analysis has shown that the current conduction is dominated by the quantum mechanical tunneling and correlated barriers hoping mechanisms. The amplitude of the reflection coefficient and the return loss spectral analyses indicated that the hybrid devices are band stop filters in addition to it is usability as nonlinear optical interfaces, CMOS device and tunneling diodes.


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Last updated on 2020-24-02 at 13:32